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| RB095T-90 Diodes Schottky barrier diode RB095T-90 Applications Switching power supply External dimensions (Unit : mm) 9.9 0.8 0.3 2.2 Structure 10.0 1.2 1.3 0.8 5.00.2 Features 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability 10.00.3 0.1 1.80.2 7.00.3 0.1 4.50.3 0.1 2.80.2 1.1 0.1 7.2 1.2 8.00.2 12.00.2 15.0 0.70.015 7.0 8.0 3.10.1 0.70.015 2.60.03 1.9 7.2 3-1.2 1.6 12.4 ROHM : O220FN Manufacture Date Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz1cyc) (*1) Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg 1.35 Construction Silicon epitaxial planar (1) (2) (3) 2.540.5 2.540.5 13.5MIN 17.00.4 0.2 2.60.03 0.8 Limits 90 90 6 100 150 -40 to +150 Unit V V A A (*1)Tc=100max Per chip : Io/2 Electrical characteristic (Ta=25C) Parameter Symbol Forward voltage Reverse current Thermal impedance VF IR jc Min. - Typ. - Max. 0.75 150 3.0 Unit V A /W Conditions IF=3A VR=90V junction to case Rev.A 1/3 RB095T-90 Diodes Electrical characteristic curves 10 100000 10000 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) 1000 100 Ta=25 10 1 0.1 0.01 0 100 200 300 400 500 600 700 800 900 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 0 10 20 30 40 50 60 70 80 90 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 1 0 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 Ta=-25 Ta=75 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=150 1 Ta=125 Ta=75 Ta=25 Ta=-25 0.1 Ta=150 Ta=125 1000 f=1MHz 100 10 0.01 750 Ta=25 IF=10A n=30pcs 200 180 160 REVERSE CURRENT:IR(uA) 140 120 100 80 60 40 20 0 VF DISPERSION MAP AVE:13.7uA Ta=25 VR=90V n=30pcs 400 390 380 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 370 360 350 340 330 320 310 300 AVE:357.9pF Ta=25 f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:VF(mV) 740 730 720 710 AVE:715.7mV 700 IR DISPERSION MAP Ct DISPERSION MAP 300 RESERVE RECOVERY TIME:trr(ns) 250 200 150 100 50 0 AVE:225.0A Ifsm 8.3ms 1cyc 30 25 20 15 10 5 0 trr DISPERSION MAP IFSM DISRESION MAP AVE:8.30ns Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs 1000 Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc 100 10 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1000 Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) t 100 IM=100mA IF=6A 10 TRANSIENT THAERMAL IMPEDANCE:Rth (/W) 8 1ms time FORWARD POWER DISSIPATION:Pf(W) 10 300us Rth(j-a) D=1/2 6 Sin(180) 4 DC 100 1 Rth(j-c) 2 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0.1 10 1000 TIME:t(s) Rth-t CHARACTERISTICS 0 0 2 4 6 8 10 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS Rev.A 2/3 RB095T-90 Diodes 15 15 0A 0V t AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 10 DC T 5 0A 0V t DC Io VR D=t/T VR=45V Tj=150 Io VR D=t/T VR=45V Tj=150 AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) 4 REVER SE P OWER DISSIPATION:P R (W) 10 D=1/2 T 3 DC 2 Sin(180) D=1/2 D=1/2 5 Sin(180) 5 Sin(180) 1 0 0 10 20 30 40 50 60 70 REVERSE VOLTAGE:VR(V) VR-P R CHARACTERISTICS 80 90 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta() Derating Curve (Io-Ta) 150 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc() Derating Curve (Io-Tc) 150 30 25 ELECTROSTATIC DDISCHARGE TEST ESD(KV) AVE:26.70kV 20 15 AVE:9.60kV 10 5 0 C=200pF R=0 C=100pF R=1.5k ESD DISPERSION MAP Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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